Michael Vodicka

$SNDK $MU $SKHY A lot of you are confused between HBF and HBM. Worse, some of you pretend to know and write posts that mislead everyone else. They will never replace each other. Here's why: As a memory expert, I could write an IEEE style journal on this right here. But it would just get stolen by the big accounts, so I won't. Keeping it simple. The easiest way to think about HBF and HBM is to think about NAND and DRAM relationship today. It's a symbiosis. They can't replace each other. Not with better controllers. Not with smarter firmware. Not ever. The reason is PHYSICS. NAND has density but wears out. It degrades over time. DRAM is low latency but volatile. Data goes puff when power goes out. NAND memory is called NAND because it actually uses NAND gates and they are connected serially, so it does well on serial read (big file reads/writes in which bits are done sequentially cell by cell). So HBF might be suitable to store big AI Models. DRAM cells can be addressed individually, so it does well on random access, small to medium size files spread across different physical/logical addresses (hence the name Dynamic Random Access Memory). So HBM might be more suitable for KV cache or frequently used Models. Memory makers aren't selling you products. They're selling you one type of physics over another. You can't swap physics. You choose one physics for your application.